High-speed SiGe BiCMOS technologies: 120-nm Status and end-of-roadmap challenges

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Volumn , Issue , 2007, Pages 18-23

  Chevalier, P ^a   Barbalat, B ^a,b   Laurens, M ^a   Vandelle, B ^a   Rubaldo, L ^a   Geynet, B ^a,c   Voinigescu, S P ^d   Dickson, T O ^d   Zerounian, N ^b   Chouteau, S ^a   Dutartre, D ^a   Monroy, A ^a   Aniel, F ^b   Dambrine, G ^c   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d UNIVERSITY OF TORONTO   (Canada)

Author keywords

BiCMOS; Heterojunction bipolar transistors (HBT); Millimeter wave circuits; Optical communications; Silicon germanium (SiGe)

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; MICROELECTRONICS; MILLIMETER WAVE DEVICES; OPTICAL COMMUNICATION;

MILLIMETER WAVE CIRCUITS; OPTICAL CIRCUITS; SILICON GERMANIUM (SIGE); STMICROELECTRONICS;

BICMOS TECHNOLOGY;

EID: 34547318901     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322759     Document Type: Conference Paper

References (16)

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