An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2002, Pages 147-150

  Martinet, B ^a   Romagna, F ^a   Kermarrec, O ^b   Campidelli, Y ^a   Saguin, F ^a   Baudry, H ^a   Marty, M ^a   Dutartre, D ^a   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON COMPOUNDS; TRANSIT TIME DEVICES;

CURRENT GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036442292     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. H.G.A Huizing et al., "Base current tuning in SiGe HBT's by SiGe in the emitter", IEDM'01 Tech. Dig., pp. 899-902.
2. V.D. Kunz et al., "Application of polycrystalline SiGe for gain control in SiGe HBTs", accepted for presentation at ESSDERC-02.
3. B. Martinet et al., "Ultra-high-speed SiGe:C HBTs using non selective base epitaxy", submitted for publication to Electronics Letters.
4. H. Baudry et al., "High performance 0.25μm SiGe and SiGe:C HBTs using non selective epitaxy", BCTM-01 Tech. Dig., pp. 52-55.
5. P. Ashburn, "Design and realization of bipolar transistors", Wiley, 1988.
6. G.L. Patton et al., "SiGe heterojunction bipolar transistors: physics and design issues", IEDM-90 Tech. Dig., pp. 13-16.