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Volumn , Issue , 2006, Pages

Low-power, low-phase noise SiGe HBT static frequency divider topologies up to 100 GHz

Author keywords

SiGe HBT; Static frequency dividers

Indexed keywords

ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; PHASE NOISE; SILICON COMPOUNDS;

EID: 39049153241     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2006.311163     Document Type: Conference Paper
Times cited : (37)

References (9)
  • 1
    • 33847028792 scopus 로고    scopus 로고
    • SiGe BiCMOS Topologies for Low-Voltage Millimeter-Wave Voltage-Controlled oscillators and Frequency Dividers
    • T. O. Dickson and S. P. Voinigescu," SiGe BiCMOS Topologies for Low-Voltage Millimeter-Wave Voltage-Controlled oscillators and Frequency Dividers " SiRF2006 Techn. Digest, pp. 273-276.
    • SiRF2006 Techn. Digest , pp. 273-276
    • Dickson, T.O.1    Voinigescu, S.P.2
  • 2
    • 5444246386 scopus 로고    scopus 로고
    • 96-GHz Static Frequency Divider in SiGe Bipolar Technology
    • Oct
    • A. Rylyakov, and T. Zwick, "96-GHz Static Frequency Divider in SiGe Bipolar Technology," JSSC, vol. 39, no. 10, pp. 1712-1715, Oct. 2004.
    • (2004) JSSC , vol.39 , Issue.10 , pp. 1712-1715
    • Rylyakov, A.1    Zwick, T.2
  • 3
    • 1042277548 scopus 로고    scopus 로고
    • MAX 0.13μm SiGe:C BiCMOS technology
    • MAX 0.13μm SiGe:C BiCMOS technology," BCTM 2003 Proceedings, pp. 199-202.
    • BCTM 2003 Proceedings , pp. 199-202
    • Laurens, M.1
  • 4
    • 27944497859 scopus 로고    scopus 로고
    • max self-aligned SiGeC HBT optimized towards CMOS compatibility
    • max self-aligned SiGeC HBT optimized towards CMOS compatibility" BCTM 2005 Proceedings, pp. 120-123.
    • BCTM 2005 Proceedings , pp. 120-123
    • Chevalier, P.1
  • 5
    • 0042280609 scopus 로고    scopus 로고
    • 100+ GHz Static Divide-by-2 Circuit in InP-DHBT Technology
    • Sept
    • M. Mokhtari, at al. "100+ GHz Static Divide-by-2 Circuit in InP-DHBT Technology," JSSC, vol. 38, no. 9, pp. 1540-1544, Sept. 2003.
    • (2003) JSSC , vol.38 , Issue.9 , pp. 1540-1544
    • Mokhtari, M.1    at al2
  • 6
    • 27844471044 scopus 로고    scopus 로고
    • Transistor and Circuit Design for 100-200 GHz ICs
    • Oct
    • M. Rodwell, et al. "Transistor and Circuit Design for 100-200 GHz ICs," JSSC, vol. 40, no. 10, pp. 2061-2069, Oct. 2005.
    • (2005) JSSC , vol.40 , Issue.10 , pp. 2061-2069
    • Rodwell, M.1
  • 7
    • 34548829447 scopus 로고    scopus 로고
    • Performance Variations of a 66GHz Static CML Divider in 90nm CMOS
    • J. O Plouchart, et al. "Performance Variations of a 66GHz Static CML Divider in 90nm CMOS," ISSCC 2006 Digest, pp. 526-527.
    • ISSCC 2006 Digest , pp. 526-527
    • Plouchart, J.O.1
  • 8
    • 34548823306 scopus 로고    scopus 로고
    • 110-GHz Static Frequency Divider in SiGe Bipolar Technology
    • S. Trotta, et al. "110-GHz Static Frequency Divider in SiGe Bipolar Technology," CSICS 2005 Digest, pp. 291-294.
    • CSICS 2005 Digest , pp. 291-294
    • Trotta, S.1
  • 9
    • 21644473859 scopus 로고    scopus 로고
    • A Low Power (45mW/Latch) Static 150 GHz CML Divider
    • D. A. Hitko, et al. "A Low Power (45mW/Latch) Static 150 GHz CML Divider," CSICS 2004 Digest, pp. 167-170.
    • CSICS 2004 Digest , pp. 167-170
    • Hitko, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.