Band-to-band tunneling in vertically scaled SiGe:C HBTs

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 275-277

  Lagarde, D ^a   Chevalier, Pascal ^a   Schwartzmann, T ^a   Chantre, A ^a  

^a STMICROELECTRONICS   (France)

Author keywords

Heterojunction bipolar transistor (HBT); Negative differential resistance; SiGe; Tunneling

Indexed keywords

ELECTRON TUNNELING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

EMITTER-BASE ENGINEERING; NEGATIVE DIFFERENTIAL RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33645796434     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.871853     Document Type: Article

References (11)

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