Tunneling currents through lightly nitride silicon dioxide/oxide stacks

Physica Status Solidi (A) Applications and Materials Science

Volumn 204, Issue 3, 2007, Pages 784-790

  Mao, L F ^a   Wang, Z O ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM CONCENTRATIONS; NITROGEN ATOM; OXIDE FIELD; OXYNITRIDE; TUNNELING CURRENTS;

BAND STRUCTURE; COMPUTER SIMULATION; CONCENTRATION (PROCESS); LEAKAGE CURRENTS; NITROGEN; THIN FILMS;

SILICON NITRIDE;

EID: 34547155687     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622325     Document Type: Article

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