Correlation of charge transport to intrinsic strain in silicon oxynitride and Si-rich silicon nitride thin films

Applied Physics Letters

Volumn 84, Issue 2, 2004, Pages 215-217

  Habermehl, S ^a   Apodaca, R T ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; AMORPHOUS SILICON; APPROXIMATION THEORY; CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; ELASTICITY; NITROGEN OXIDES; SILICA; THERMAL EXPANSION; THIN FILMS; VOLUME FRACTION;

CHARGE TRANSPORT; DICHLOROSILANE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NITROUS OXIDE; SILICON OXYNITRIDE;

SILICON NITRIDE;

EID: 0842290112     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1639132     Document Type: Article

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