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Volumn 389-393, Issue 1, 2002, Pages 51-54
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The development of 2in 6H-SiC wafer with high thermal-conductivity
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Author keywords
Conductive carrier; Lattice vibration; Thermal conductivity
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Indexed keywords
DOPING (ADDITIVES);
LATTICE VIBRATIONS;
SILICON CARBIDE;
SINGLE CRYSTALS;
SUBLIMATION;
THERMAL CONDUCTIVITY;
SILICON WAFERS;
TEMPERATURE DISTRIBUTION;
CONDUCTIVE CARRIERS;
LATTICE VIBRATION;
TEMPERATURE DEPENDENCE;
BULK SINGLE CRYSTALS;
CONDUCTIVE CARRIER;
FREE CARRIERS;
HIGH QUALITY;
HIGH THERMAL CONDUCTIVITY;
SUBLIMATION METHODS;
THERMAL CONDUCTION;
SILICON WAFERS;
THERMAL CONDUCTIVITY;
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EID: 8744284469
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.51 Document Type: Article |
Times cited : (6)
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References (7)
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