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Volumn 389-393, Issue 1, 2002, Pages 51-54

The development of 2in 6H-SiC wafer with high thermal-conductivity

Author keywords

Conductive carrier; Lattice vibration; Thermal conductivity

Indexed keywords

DOPING (ADDITIVES); LATTICE VIBRATIONS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; THERMAL CONDUCTIVITY; SILICON WAFERS; TEMPERATURE DISTRIBUTION;

EID: 8744284469     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.51     Document Type: Article
Times cited : (6)

References (7)
  • 6
    • 34247275678 scopus 로고    scopus 로고
    • D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Müller, V. Tsvetkov and C. Carter, Jr. : Mater. Sci. Forum Vols. 338-342 (2000), p.3.
    • D. Hobgood, M. Brady, W. Brixius, G. Fechko, R. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Müller, V. Tsvetkov and C. Carter, Jr. : Mater. Sci. Forum Vols. 338-342 (2000), p.3.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.