Physical understanding of gate-depletion phenomena in poly-Si/HfSiON stacks based on C-V differentiation analysis

IEEE Transactions on Electron Devices

Volumn 54, Issue 7, 2007, Pages 1689-1695

  Saitoh, Masumi ^a   Kamimuta, Yuuichi ^b   Saito, Tomohiro ^a   Sekine, Katsuyuki ^a   Kobayashi, Takuya ^a   Aoyama, Tomonori ^a   Koyama, Masato ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

^b MIRAI ASET   (Japan)

Author keywords

C V analysis; Differentiation; Fermi level pinning; Flatband voltage shift; Gate depletion; HfSiON; High ; Oxygen vacancy; Poly Si gate; SiN

Indexed keywords

FERMI-LEVEL PINNING; FLATBAND VOLTAGE SHIFT; GATE DEPLETION; OXYGEN VACANCY;

CAPACITANCE; CHARGE DENSITY; FERMI LEVEL; HAFNIUM COMPOUNDS; IMPURITIES; POLYSILICON;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 34447309741     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.898458     Document Type: Article

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