Origin of flatband voltage shift in poly-Si/Hf-bsed high-k gate dielectrics and flatband voltage dependence on gate stack structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7843-7847

  Miyamura, Makoto ^a   Masuzaki, Koji ^a   Watanabe, Heiji ^a   Ikarashi, Nobuyuki ^a   Tatsumi, Toru ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Flatband voltage shift; Gate dielectrics; Hafnium silicate; Interface

Indexed keywords

ANNEALING; BORON; CAPACITANCE MEASUREMENT; CHEMICAL VAPOR DEPOSITION; FERMI LEVEL; HAFNIUM; INTERFACES (MATERIALS); MOS CAPACITORS; MOSFET DEVICES; SILICON; THIN FILMS; VOLTAGE CONTROL;

CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; FLATBAND VOLTAGE SHIFT; GATE DIELECTRICS; HAFNIUM SILICATE;

DIELECTRIC MATERIALS;

EID: 12844285624     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7843     Document Type: Conference Paper

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