Ionization rates and critical fields in 4H SiC junction devices

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 513-516

  Konstantinov, A O ^a   Wahab, Q ^b   Nordell, N ^c   Lindefelt, U ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

Blocking Voltage; Critical Field; Ionization Rates; Junction Breakdown

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; IONIZATION OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

PHOTOMULTIPLICATION MEASUREMENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031648616     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.513     Document Type: Article

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