Effects of interface dislocations on properties of ferroelectric thin films

Journal of the Mechanics and Physics of Solids

Volumn 55, Issue 8, 2007, Pages 1661-1676

  Zheng, Yue ^a,b   Wang, Biao ^b,c   Woo, C H ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c SUN YAT SEN UNIVERSITY   (China)

Author keywords

Coercive field; Ferroelectric thin film; Interface dislocations; Remnant polarization; Self polarization

Indexed keywords

COERCIVE FORCE; CURIE TEMPERATURE; DISLOCATIONS (CRYSTALS); PERMITTIVITY; POLARIZATION; SURFACE CHEMISTRY;

COERCIVE FIELD; INTERFACE DISLOCATIONS; SWITCHING BEHAVIORS; SYSTEM DYNAMICS;

FERROELECTRIC THIN FILMS;

EID: 34250854014     PISSN: 00225096     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmps.2007.01.011     Document Type: Article

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