Improvement of high temperature water rinsing and drying for HF-last wafer cleaning

Journal of the Electrochemical Society

Volumn 143, Issue 1, 1996, Pages 233-237

  Li, L ^a,b   Bender, H ^a   Zou, G ^a   Mertens, P W ^a   Meuris, M A ^a   Heyns, M M ^a  

^a IMEC   (Belgium)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; CONCENTRATION (PROCESS); ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE PROPERTIES; OXIDATION; SEMICONDUCTING SILICON; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

BOILING WATER TREATMENT; CONTACT ANGLE MEASUREMENT APPARATUS; HOT WATER IMMERSION; LIGHT POINT DEFECTS; LIGHT SCATTERING MEASUREMENT; MULTIPLE INTERNAL REFLECTIONS; SENSITIVE LIGHT SCATTERING SYSTEM; SURFACE MICROROUGHNESS; SURFACE PASSIVATION;

SILICON WAFERS;

EID: 0029751919     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836414     Document Type: Article

References (16)

1. E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett., 57, 249 (1986).
2. V. A. Burrows, Y. J. Chabal, G. S. Higashi, K. Raghavachari, and S. B. Christman, Appl. Phys. Lett., 53, 998 (1988).
3. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and K. Suma, ibid., 55, 562 (1989).
4. D. Gräf, M. Grundner, R. Schnlz, and L. Mühlhoff, J. Appl. Phys., 68, 5155 (1990).
5. T. Yasaka, M. Takakura, K. Sawara, S. Uenaga, H. Yasutake, S. Miyazaki, and M. Hirose, IEICE Trans. Electron., E75-C, 764 (1992).
6. J. H. Eisenberg, S. F. Shive, F. Stevie, G. S. Higashi, T. Boone, K. Hanson, J. B. Sapjeta, G. N. Dibello, and K. L. Fulford, Mater. Res. Soc. Symp. Proc., 315, 485 (1993).
7. G. D. Ching and R. B. Murtha, Microcontamination Conference Proceedings, 378 (1993).
8. H. Bender, S. Verhaverbeke, and M. M. Heyns, This Journal, 142, 3128 (1995).
9. S. Verhaverbeke, J. Alay, P. Mertens, M. Meuris, M. Heyns, W. Vandervorst, M. Murrel, and C. Sofield, Mater. Res. Soc. Symp. Proc., 259, 391 (1992).
10. S. Watanabe, N. Nakayama, and T. Ito, Appl. Phys. Lett., 59, 1458 (1991).
11. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys., 68, 1272 (1990).
12. G. J. Pietsch, U. Köhler, and M. Henzler, Chem. Phys. Lett., 197, 346 (1992).
13. CRC Handbook of Chemistry and Physics, 73rd ed., D. R. Lide, Editor-in-Chief, p. 8-42, CRC Press, Boca Raton, FL (1992-1993).
14. D. Gräf, M. Brohl, S. Bauer-Mayer, A. Ehlert, P. Wagner, and A. Schnegg, Mater. Res. Soc. Symp., 315, 23 (1993).
15. D. Graf, M. Grundner, and R. Schulz, J. Vac. Sci. Technol., A7, 808 (1989).
16. G. S. Higashi, Y. J. Chabal, K. Raghavachari, R. S. Becheer, M. P. Green, K. Hanson, T. Boone, J. H. Eisenberg, S. F. Shive, G. N. Dibello, and K.L. Fulford, in ULSI Science and Technology, 1993, G. K. Celler, E. Middlesworth, and K. Hoh, Editors, PV 93-13, p. 189, The Electrochemical Society Proceedings Series, Pennington, NJ (1993).