The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet chemical etching

Materials Research Bulletin

Volumn 42, Issue 9, 2007, Pages 1589-1593

  Yu, N S ^a   Guo, L W ^a   Tang, L H ^b   Zhu, X L ^a   Wang, J ^a   Peng, M Z ^a   Yan, J F ^a   Jia, H Q ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

^b SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

A. Nitrides; A. Semiconductors; A. Thin films; B. Epitaxial growth; C. X ray diffraction

Indexed keywords

EPITAXIAL GROWTH; FINITE ELEMENT METHOD; SEMICONDUCTOR MATERIALS; THIN FILMS; WET ETCHING; X RAY DIFFRACTION;

HIGH RESOLUTION X-RAY ROCKING; MICRO RAMAN SPECTROSCOPY MEASUREMENT; WING REGION;

GALLIUM NITRIDE;

EID: 34250308927     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2006.11.042     Document Type: Article

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