Strain profile of (001) silicon implanted with nitrogen by plasma immersion

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Diaz B ^a   Abramof, E ^a   Castro, R M ^a   Ueda, M ^a   Reuther, H ^b  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ION IMPLANTATION; NITROGEN; PLASMA APPLICATIONS; STRAIN;

BRAGG REFLECTION; DISPLACEMENT FIELDS; PLASMA IMMERSION;

SILICON;

EID: 34249931198     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734957     Document Type: Article

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