Depth resolved investigations of boron implanted silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 200, Issue , 2003, Pages 52-59

  Sztucki, M ^a,b   Metzger, T H ^b   Milita, S ^c   Berberich, F ^b   Schell, N ^b   Rouviere J L ^d   Patel, J ^e,f  

^a UNIVERSITY OF MUNICH   (Germany)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^c CNR   (Italy)

^d CEA GRENOBLE   (France)

^e SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Defects; Diffuse X ray scattering; Ion implantation; Transmission electron microscopy

Indexed keywords

BORON; ION IMPLANTATION; POINT DEFECTS; RAPID THERMAL ANNEALING; STACKING FAULTS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

DISLOCATION LOOPS;

SILICON WAFERS;

EID: 0037238803     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01674-9     Document Type: Conference Paper

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