Strain and defect structure of iron implanted In0.53Ga 0.47As using high-resolution X-ray diffraction

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 239, Issue 4, 2005, Pages 414-418

  Too, P ^a   Domagala, J Z ^b   Bak Misiuk, J ^b   Kozanecki, A ^b   Ahmed, S ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

III V Semiconductor; Ion implantation; X ray diffraction

Indexed keywords

ANNEALING; DEFECTS; IRON COMPOUNDS; LATTICE CONSTANTS; SEMICONDUCTOR MATERIALS; STRAIN; X RAY DIFFRACTION;

DEFECT STRUCTURE; III-V SEMICONDUCTOR; IMPLANTATION TEMPERATURE; STRAIN STRUCTURE;

ION IMPLANTATION;

EID: 25644452048     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.123     Document Type: Article

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