X-ray study of silicon crystal structure changes due to implantation with fast nitrogen ions

Journal of Alloys and Compounds

Volumn 328, Issue 1-2, 2001, Pages 237-241

  Zymierska, D ^a   Auleytner, J ^a   Godwod, K ^a   Domagala, J ^a   Datsenko, L ^b   Choinski J ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

Fast ion implantation; Grazing incidence X ray reflectometry; Multicrystal diffractometry; Silicon; X ray diffraction

Indexed keywords

CRYSTAL ORIENTATION; DIFFRACTOMETERS; ION BOMBARDMENT; ION IMPLANTATION; LIGHT REFLECTION; NEGATIVE IONS; SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE; MULTICRYSTAL DIFFRACTOMETRY;

SINGLE CRYSTALS;

EID: 0035807483     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(01)01300-7     Document Type: Article

References (14)