Reciprocal space mapping of silicon implanted with nitrogen by plasma immersion ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 229-234

  Abramof, E ^a   Beloto, A F ^a   Ueda, M ^a   Gunzel R ^b   Reuther, H ^b  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

High resolution X ray diffraction; Plasma immersion ion implantation; Reciprocal space mapping; Silicon crystals

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELECTRON CYCLOTRON RESONANCE; ION IMPLANTATION; NITROGEN; X RAY DIFFRACTION ANALYSIS;

PLASMA IMMERSION ION IMPLANTATION (PIII);

SILICON WAFERS;

EID: 0035302336     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00635-2     Document Type: Conference Paper

References (11)