Electrical characterization of silicon nitride produced by plasma immersion ion implantation

Surface and Coatings Technology

Volumn 93, Issue 2-3, 1997, Pages 269-273

  Chen, S M ^a   Shannon, J M ^a   Gwilliam, R M ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Ion implantation; Plasma; Silicon nitride

Indexed keywords

ALLOYING; AMORPHOUS FILMS; ANNEALING; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; HYDROGEN; ION IMPLANTATION; PASSIVATION; PLASMA APPLICATIONS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR DIODES; SYNTHESIS (CHEMICAL);

PLASMA IMMERSION ION IMPLANTATION (PIII);

SILICON NITRIDE;

EID: 0031221420     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(97)00059-5     Document Type: Article

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