Multiple gate oxide technology using nitrogen implantation and high-pressure O2 oxidation

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 88-91

  Lee, C H ^a   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE EFFECTS; ION IMPLANTATION; NITROGEN; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

GATE OXIDES;

MOS DEVICES;

EID: 0037320804     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/304     Document Type: Article

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