Diffusion of hydrogen in 6H silicon carbide

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 625-630

  Linnarsson, M K ^a   Doyle, J P ^a   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DIFFUSION IN SOLIDS; HYDROGEN; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

CARBON HYDROGEN CENTERS; IMPLANTATION INDUCED DEFECTS;

SILICON CARBIDE;

EID: 0030413773     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-625     Document Type: Conference Paper

References (10)