Microwave silicon carbide Schottky diodes

Electronics Letters

Volumn 37, Issue 4, 2001, Pages 250-252

  Eriksson, J ^a   Rorsman, N ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FREQUENCY MEASUREMENT; ELECTRIC RESISTANCE MEASUREMENT; MICROWAVE DEVICES; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; VOLTAGE MEASUREMENT;

CUTOFF FREQUENCY; HIGH FREQUENCY APPLICATIONS; HIGH POWER APPLICATIONS; MICROWAVE DIODES; REVERSE VOLTAGE; SILICON CARBIDE DIODES; SPECIFIC EPISTRUCTURE;

SCHOTTKY BARRIER DIODES;

EID: 6644220439     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010163     Document Type: Article

References (5)

1. TREW, R.J.: 'Wide bandgap semiconductor transistors for microwave power amplifiers', IEEE Microw. Mag., 2000, 1, (1), pp. 46-54
2. TREW, R.J., YAN, J.B., and MOCK, P.M.: 'The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications', Proc. IEEE, 1991, 79, (5), pp. 598-620
3. ITOH, A., TAKEMURA, O., KIMOTO, T., and MATSUNAMI, H.: 'Barrier height analysis of metal/4H-SiC Schottky contacts'. Proc. Int. Conf. Silicon Carbide and Related Materials, Kyoto, Japan, September 1995, (Inst. Phys. Conf. Ser., No 142, 'Silicon Carbide and Related Materials 1995'), pp. 685-688
4. ITOH, A., TAKEMURA, O., KIMOTO, T., and MATSUNAMI, H.: 'Barrier height analysis of metal/4H-SiC Schottky contacts'. Proc. Int. Conf. Silicon Carbide and Related Materials, Kyoto, Japan, September 1995, (Inst. Phys. Conf. Ser., No 142, 'Silicon Carbide and Related Materials 1995'), pp. 685-688
5. ERIKSSON, J., RORSMAN, N., FERDOS, F., and ZIRATH, H.: 'Design and characterisation of a singly balanced silicon carbide Schottky diode high-level mixer', accepted for publication in Electron. Lett.,