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Volumn 527-529, Issue PART 1, 2006, Pages 489-492

Deep level defects related to carbon displacements in n- and p-type 4H-SiC

Author keywords

Carbon vacancy; DLTS; Electron irradiation; Intrinsic defects; MCTS; P type

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; ELECTRON IRRADIATION; EPILAYERS;

CAPACITANCE TRANSIENT TECHNIQUES; CARBON VACANCY; INTRINSIC DEFECTS; OPTICAL TRAP FILLING;

SILICON CARBIDE;

EID: 34249873179 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-425-1.489 Document Type: Conference Paper

Times cited : (8)

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