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Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

Carrier concentration induced band-gap shift in Al-doped Zn 1-xMgxO thin films

(6) Lu, J G a Fujita, S a Kawaharamura, T a Nishinaka, H a Kamada, Y a Ohshima, T a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ENERGY GAP; GLASS; MAGNESIUM PRINTING PLATES; OPACITY; SEMICONDUCTING ZINC COMPOUNDS;

ALLOY COMPOSITION; BAND-GAP SHIFT; GLASS SUBSTRATES; RENORMALIZATION EFFECTS;

THIN FILMS;

EID: 33846034444 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2424308 Document Type: Article

Times cited : (112)

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