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Volumn 33, Issue 11, 1999, Pages 1188-1192

Deep-level transient spectroscopy of radiation-induced levels in 6H-SiC

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0033229601     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187846     Document Type: Article
Times cited : (18)

References (15)
  • 10
    • 21344475532 scopus 로고
    • N. I. Kuznetsov, Fiz. Tekh. Poluprovodn. 27, 1674 (1993) [Semiconductors 27, 925 (1993)].
    • (1993) Semiconductors , vol.27 , pp. 925
  • 13
    • 0039800975 scopus 로고
    • A. I. Girka, V. A. Kuleshin, A. D. Mokrushin, E. N. Mokhov, S. V. Svirida, and A. V. Shishkin, Fiz. Tekh. Poluprovodn. 23, 2159 (1989) [Sov. Phys. Semicond. 23, 1337 (1989)].
    • (1989) Sov. Phys. Semicond. , vol.23 , pp. 1337
  • 15
    • 0002335479 scopus 로고
    • A. I. Veǐnger, V. A. Il'in, Yu. M. Tairov, and V. F. Tsvetkov, Fiz. Tekh. Poluprovodn. 15, 1557 (1981) [Sov. Phys. Semicond. 15, 902 (1981)].
    • (1981) Sov. Phys. Semicond. , vol.15 , pp. 902


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.