Improvement of electrical properties of Cu/SiCOH low-k film integrated system by O2 plasma treatment

Chinese Physics

Volumn 16, Issue 2, 2007, Pages 524-528

  Qian, Xiao Mei ^a   Wei, Yong Xia ^a   Yu, Xiao Zhu ^a   Ye, Chao ^a   Ning, Zhao Yuan ^a   Liang, Rong Qing ^b  

^a SOOCHOW UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

Electrical property; O2 plasma treatment; Porous SiCOH film

Indexed keywords

COPPER; DANGLING BONDS; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; PERMITTIVITY; POROUS MATERIALS; SILICON COMPOUNDS;

BONDING CONFIGURATIONS; OXYGEN PLASMA TREATMENT;

DIELECTRIC FILMS;

EID: 34249027692     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/2/039     Document Type: Article

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