The effect of the CH4 plasma treatment on deposited SiOC(-H) films with low dielectric constant prepared by using TMS/O2 PECVD

Thin Solid Films

Volumn 475, Issue 1-2 SPEC. ISS., 2005, Pages 150-154

  Yang, Chang Sil ^a   Yu, Young Hun ^a   Lee, Heon Ju ^b   Lee, Kwang Man ^a   Choi, Chi Kyu ^a  

^a Jeju National University   (South Korea)

^b Research Institute of Advanced Technology   (South Korea)

Author keywords

Breakdown voltage; Low k; O2 ashing; Plasma treatment

Indexed keywords

CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC BREAKDOWN; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; PERMITTIVITY; PHOTORESISTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; THERMODYNAMIC STABILITY;

LOW-K; O2 ASHING; PHOTORESIST STRIPPING; PLASMA TREATMENT;

METHANE;

EID: 13444256248     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.07.019     Document Type: Conference Paper

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