-
3
-
-
0021411184
-
-
E. Schöll, D. Bimberg, H. Schumacher, and P. T. Landsberg, IEEE J. Quantum Electron. QE-20, 394 (1984).
-
(1984)
IEEE J. Quantum Electron.
, vol.QE-20
, pp. 394
-
-
Schöll, E.1
Bimberg, D.2
Schumacher, H.3
Landsberg, P.T.4
-
4
-
-
11744354099
-
-
I. Fischer, O. Hess, W. Elsäßer and E. Göbel, Phys. Rev. Lett. 73, 2188 (1994).
-
(1994)
Phys. Rev. Lett.
, vol.73
, pp. 2188
-
-
Fischer, I.1
Hess, O.2
Elsäßer, W.3
Göbel, E.4
-
6
-
-
0029359992
-
-
J. Yao, G. P. Agrawal, P. Gallion and C. M. Bowden, Opt. Commun. 119, 246 (1995).
-
(1995)
Opt. Commun.
, vol.119
, pp. 246
-
-
Yao, J.1
Agrawal, G.P.2
Gallion, P.3
Bowden, C.M.4
-
13
-
-
85037231991
-
-
T. Kuhn, Ladungsträgerdynamik in Halbleitersystemen fern vom Gleichgewicht: Elektronisches Rauschen und kohärente Prozesse (Shaker, Aachen, 1994)
-
T. Kuhn, Ladungsträgerdynamik in Halbleitersystemen fern vom Gleichgewicht: Elektronisches Rauschen und kohärente Prozesse (Shaker, Aachen, 1994).
-
-
-
-
14
-
-
85037225976
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-
An alternative approach would be the use of the nonequilibrium Green's function theory 17
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An alternative approach would be the use of the nonequilibrium Green's function theory 17.
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16
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85037219090
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In long-wavelength semiconductor lasers Auger recombination processes indeed are relevant and can no longer be disregarded such as in the case of the GaAs-semiconductor system considered here
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In long-wavelength semiconductor lasers Auger recombination processes indeed are relevant and can no longer be disregarded such as in the case of the GaAs-semiconductor system considered here.
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32
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-
0001908178
-
-
C. Ell, R. Blank, S. Benner and H. Haug, J. Opt. Soc. Am. B 6, 2006 (1989).
-
(1989)
J. Opt. Soc. Am. B
, vol.6
, pp. 2006
-
-
Ell, C.1
Blank, R.2
Benner, S.3
Haug, H.4
-
33
-
-
85037228103
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It should be noted that at low densities where due to the weak screening carrier-carrier scattering processes are strongly peaked in a forward direction this approximation largely overestimates the dephasing 40. However, it has been shown 28 that at high carrier densities the assumption of random phases is well satisfied
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It should be noted that at low densities where due to the weak screening carrier-carrier scattering processes are strongly peaked in a forward direction this approximation largely overestimates the dephasing 40. However, it has been shown 28 that at high carrier densities the assumption of random phases is well satisfied.
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34
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85037177866
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Omitted end note
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Omitted end note.
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35
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85037248817
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Omitted end note
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Omitted end note.
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39
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-
85037196029
-
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O. Hess, Spatio-temporal Dynamics of Semiconductor Lasers (Wissenschaft und Technik Verlag, Berlin, 1993)
-
O. Hess, Spatio-temporal Dynamics of Semiconductor Lasers (Wissenschaft und Technik Verlag, Berlin, 1993).
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