Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 143-146

  Schwarz, U T ^a   Sturm, E ^a   Wegscheider, W ^a   Kummler V ^b   Lell, A ^b   Harle V ^b  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; FABRY-PEROT INTERFEROMETERS; GAIN MEASUREMENT; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS;

CURRENT INDUCED CHANGE; HAKKI-PAOLI METHOD; MODE SPACING ANOMALY;

SEMICONDUCTOR LASERS;

EID: 0346255537     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303340     Document Type: Article

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