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Volumn 6484, Issue , 2007, Pages

A TCAD approach to robust ESD design in oxide-confined VCSELs

Author keywords

Electrostatic discharge (ESD); Hydrodynarnic simulation; Robustness; Technology computer aided design (TCAD); VCSEL

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; CURRENT DENSITY; ELECTROSTATIC DISCHARGE; INTERFACES (COMPUTER); MATHEMATICAL MODELS;

EID: 34248662684     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.698997     Document Type: Conference Paper
Times cited : (4)

References (19)
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    • 33646182023 scopus 로고    scopus 로고
    • A TCAD based Yield and Reliability Analysis for VCSELs
    • Odermatt S., Eitel S., Hövel R., Gergö Letay, Witzigmann B., "A TCAD based Yield and Reliability Analysis for VCSELs", Proc. of SPIE, Vol 6132, pp. 613206, 2006.
    • (2006) Proc. of SPIE , vol.6132 , pp. 613206
    • Odermatt, S.1    Eitel, S.2    Hövel, R.3
  • 8
    • 4944249156 scopus 로고    scopus 로고
    • Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers
    • Huang C.Y., Wu M.C., Yu H.C., Jiang W.J., Wang J.M., Sung C.P., "Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers", J. Vac. Sci., Vol. 22, pp. 1970-1973, 2004.
    • (2004) J. Vac. Sci , vol.22 , pp. 1970-1973
    • Huang, C.Y.1    Wu, M.C.2    Yu, H.C.3    Jiang, W.J.4    Wang, J.M.5    Sung, C.P.6
  • 9
    • 33646862173 scopus 로고    scopus 로고
    • A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation
    • Grasser T.. Taug T.W., Kosina H., Selberherr S.. "A Review of Hydrodynamic and Energy-Transport Models for Semiconductor Device Simulation", Proc. of IEEE, Vol. 91, No. 2, 2003.
    • (2003) Proc. of IEEE , vol.91 , Issue.2
    • Grasser, T.1    Taug, T.W.2    Kosina, H.3    Selberherr, S.4
  • 16
    • 36449008101 scopus 로고
    • _xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
    • _xAs-GaAs metal-oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs", Appl. Phys. Lett., Vol, 66, pp, 2688-2690, 1995.
    • (1995) Appl. Phys. Lett , vol.66 , pp. 2688-2690
    • Chen, E.I.1    Holonyak, N.2    Maranowski, S.A.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.