1/f noise in carbon nanotube Devices - On the impact of contacts and device geometry

IEEE Transactions on Nanotechnology

Volumn 6, Issue 3, 2007, Pages 368-373

  Appenzeller, Joerg ^a,b   Lin, Yu Ming ^a,b   Knoch, Joachim ^c   Chen, Zhihong ^b   Avouris, Phaedon ^a,b  

^a IEEE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

1 f noise; Carbon nanotube; Field effect transistor

Indexed keywords

NANOTUBE CHANNEL; NANOTUBE TRANSISTOR;

ELECTRODES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); SPURIOUS SIGNAL NOISE;

CARBON NANOTUBES;

EID: 34248649871     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.892052     Document Type: Article

References (22)

1. P. G. Collins, M. S. Fuhrer, and A. Zettl, "1/f noise in carbon canotubes," Appl. Phys. Lett., vol. 76, pp. 894-896, 2000.
2. E. S. Snow, J. P. Novak, M. D. Lay, and F. K. Perkins, "1/f noise in single-wall carbon nanotube devices," Appl. Phys. Lett., vol. 85, pp. 4172-4174, 2004.
3. Y.-M. Lin, J. Appenzeller, J. Knoch, Z. Chen, and P. Avouris, "Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes," Nano Lett., vol. 6, pp. 930-936, 2006.
4. F. Liu, K. L. Wang, D. Zhang, and C. Zhou, "Noise in carbon nanotube field effect transistor," Appl. Phys. Lett., vol. 89, pp. 063116-1-063116-3, 2006.
5. M. Ishigami, J. H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, and M. S. Fuhrer, "Hooge's constant for carbon nanotube field effect transistors," Appl. Phys. Lett., vol. 88, pp. 203116-1-203116-3, 2006.
6. S. Wind, J. Appenzeller, and P. Avouris, "Lateral scaling in carbon nanotube field-effect transistors," Phys. Rev. Lett., vol. 91, pp. 058301-1-058301-4, 2003.
7. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, pp. 654-657, 2003.
8. F. N. Hooge, "1/f noise sources," IEEE Trans. Electron Devices, vol. 41, no. 11, pp. 1926-1935, Nov. 1994.
9. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C. Xu, Y. H. Lee, S. G. Kim, A. G. Rinzler, D. T. Colbert, G. E. Scuseria, D. Tomanek, J. E. Fischer, and R. E. Smalley, "Crystalline ropes of metallic carbon nanotubes," Science, vol. 273, pp. 483-487, 1996.
10. C. Liu, H.-M. Cheng, H. T. Cong, F. Li, G. Su, B. L. Zhou, and M. S. Dresselhaus, "Synthesis of macroscopically long ropes of well-aligned single-walled carbon nanotubes," Adv. Mater., vol. 12, pp. 1190-1192, 2000.
11. Z. Chen, J. Appenzeller, Y.-M. Lin, J. S. Oakley, A. G. Rinzler, J. Tang, S. J. Wind, P. Solomon, and P. Avouris, "An integrated logic circuit assembled on a single carbon nanotube," Science, vol. 311, p. 1735, 2006.
12. M. S. Fuhrer, B. M. Kim, T. Durkop, and T. Brintlinger, "High-mobility nanotube transistor memory," Nano Lett., vol. 2, pp. 755-759, 2002.
13. Z. Chen, J. Appenzeller, J. Knoch, Y.-M. Lin, and P. Avouris, "The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors," Nano Lett., vol. 5, pp. 1497-1502, 2005.
14. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, "Carbon nanotubes as Schottky barrier transistors," Phys. Rev. Lett., vol. 89, pp. 10680-1-106801-4, 2002.
15. J. Appenzeller, J. Knoch, V. Derycke, R. Martel, S. Wind, and P. Avouris, "Field-modulated carrier transport in carbon nanotube transistors," Phys. Rev. Lett., vol. 89, pp. 126801-1-126801-4, 2002.
16. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1998.
17. K. Young, "Short-channel effect in fully depleted SOI MOSFETs," IEEE Trans. Electron Devices, vol. 36, no. 2, pp. 399-402, Feb. 1989.
18. H. Flietner, "The E(k) relation for a two-band scheme of semiconductors and the application to the metal-semiconductor contact," Phys. Stat. Sol., vol. 54, p. 201, 1972.
19. J. Appenzeller, Y.-M. Lin, J. Knoch, and P. Avouris, "Band-to-band tunneling in carbon nanotube field-effect transistors," Phys. Rev. Lett, vol. 93, pp. 196805-1-196805-4, 2004.
20. J. Knoch and J. Appenzeller, "Carbon nanotube field-effect transistors - The importance of being small," in Hardware Drivers for Ambient Intelligence, S. Mukherjee, E. Aarts, R. Roovers, F. Widdershoven, and M. Ouwerkerk, Eds. New York: Springer, 2006, ch. 6.2, pp. 371-402.
21. F. N. Hooge, " 1/f noise is no surface effect," Phys. Lett., vol. 29A, pp. 139-140, 1969.
22. K. H. Duh and A. van der Ziel, "Hooge parameters for various FET structures," IEEE Trans. Electron Devices, vol. 32, no. 3, pp. 662-666, Mar. 1985.