SCOPUS 정보 검색 플랫폼

Volumn 299-302, Issue , 2002, Pages 87-92

Evolution of the surface roughness with the hydrogen partial pressure for high deposition rate of nanocrystalline silicon films

(4) Leconte, Y a Dufour, C a Garrido, B b Rizk, R a

a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux (France)

b UNIVERSITY OF BARCELONA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEPOSITION; DIFFUSION IN SOLIDS; HYDROGEN; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

NANOCRYSTALLINE SILICON FILMS;

THIN FILMS;

EID: 0036540536 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(01)00946-2 Document Type: Article

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.