Effect of aspect ratio and anode location on the field emission properties of a single tip based emitter

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 632-635

  Smith, R C ^a   Carey, J D ^a   Forrest, R D ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; APPROXIMATION THEORY; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; FIELD EMISSION CATHODES;

ANODE LOCATION; EMITTER TIP; ENHANCEMENT FACTOR; PARALLEL PLATES;

ASPECT RATIO;

EID: 24644467915     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1880072     Document Type: Conference Paper

References (21)

1. S. Iijima, Nature (London) 354, 56 (1991).
2. A. G. Rinzler, J. H. Hafner, P. Nikolaev, L. Lou, S. G. Kim, D. Tománek, P. Nordlander, D. T. Colbert, and R. E. Smalley, Science 269, 1550 (1995).
3. W. A. de Heer, A. Chatelain, and D. Ugarte, Science 270, 1179 (1995).
4. Y. Saito, K. Hamaguchi, T. Nishino, K. Hata, and K. Tohji, Jpn. J. Appl. Phys., Part 2 36, L1340 (1997).
5. J. M. Bonard, J. P. Salvetat, T. Stockli, L. Forra, and A. Chatelain, Appl. Phys. A: Mater. Sci. Process. 69, 245 (1999).
6. C. J. Edgcombe and U. Valdre, J. Microsc. 203, 188 (2001).
7. V. Filip, D. Nicolaescu, and F. Okuyama, J. Vac. Sci. Technol. B 19, 1016 (2001).
8. C. H. Adessi and M. Devel, Phys. Rev. B 65, 075418 (2002).
9. K. W. Wong, X. T. Zhou, F. C. K. Au, K. L. Lai, C. S. Lee, and S. T. Lee, Appl. Phys. Lett. 75, 2918 (1999).
10. B. Li, Y. Bando, D. Golberg, and K. Kurashima, Appl. Phys. Lett. 81, 5048 (2002).
11. Y-H Lee, C-H Choi, Y-T Jang, E-K Kim, and B-K Ju, Appl. Phys. Lett. 81, 745 (2002).
12. C. A. Spindt, J. Appl. Phys. 39, 3504 (1968).
13. J. Chen, S. Z. Deng, and N. S. Xu, Appl. Phys. Lett. 80, 3620 (2002).
14. R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928)
15. W. K. Dyke and W. W. Dolan, Adv. Electron. Electron Phys. 8, 89 (1956).
16. A. Mayer, N. M. Miskovsky, and P. H. Cutler, Phys. Rev. B 65, 155420 (2002).
17. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J-M. Bonard, and K. Kern, Appl. Phys. Lett. 76, 2071 (2000).
18. SILVACO™, Silvaco Int., Santa Clara, CA.
19. Modifications to the Fowler-Nordheim model had to be performed as this model was originally designed for use in MOSFET devices calculating emission current between silicon and silicon oxide layers. Therefore, the emission barrier is defaulted to 2 eV. For emission from CNT's into a vacuum an emission barrier of approximately 4.5 eV is used. This is achieved by modifying the two variables, f.ae and f.be which control the Fowler-Nordheim model within the SILVACO package.
20. J. M. Bonard, M. Croci, I. Arfaoui, O. Noury, D. Sarangi, and A. Châtelain, Diamond Relat. Mater. 11, 763 (2002).
21. H. G. Kosmahl, IEEE Trans. Electron Devices 38, 1534 (1991).