Effect of annealing on the composition, structure and mechanical properties of carbon nitride films deposited by middle-frequency magnetron sputtering

Materials Letters

Volumn 61, Issue 16, 2007, Pages 3443-3445

  Huang, Z H ^a   Yang, B ^a   Liu, C S ^a   Guo, L P ^a   Fan, X J ^a   Fu, D J ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

Carbon nitride; Hardness; Microstructure; Nanocrystal; Thermal properties

Indexed keywords

CARBON NITRIDE; DISSOCIATION; HARDNESS; MAGNETRON SPUTTERING; MICROSTRUCTURE; NANOCRYSTALS; RAMAN SCATTERING; REACTIVE SPUTTERING; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; MIDDLE-FREQUENCY MAGNETRON SPUTTERING;

THIN FILMS;

EID: 34248351212     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2006.11.127     Document Type: Article

References (16)

1. Liu A.Y., and Cohen M.L. Science 245 (1989) 841
2. Liu A.Y., and Cohen M.L. Phys. Rev., B 41 (1990) 10727
3. Wang E.G. Adv. Mater. 11 (1999) 1129
4. Alvarez F., Victoria N.M., Hammer P., Freire F.L., and dos santos M.C. Appl. Phys. Lett. 73 (1998) 1065
5. Hellgren N., Johansson M.P., Broitman E., Hultman L., and Sundgren J.E. Phys. Rev., B 59 (1999) 5162
6. Niu C., Lu Y.Z., and Lieber C.M. Science 261 (1993) 334
7. Cui F.Z., Qing X.L., Li D.J., and Zhao J. Surf. Coat. Technol. 131 (2005) 481
8. Shuh K., Holloway B.C., Kelly M.A., Pianetta P., Terminello L.J., and Himpsel F.J. Appl. Phys. Lett. 74 (1999) 2620
9. Jiang D., Fitzgerald A.G., and Rose M.J. Appl. Surf. Sci. 181 (2001) 331
10. Wang X.C., Li Z.Q., Wu P., Jiang E.Y., and Bai H.L. Appl. Surf. Sci. 253 (2006) 2087
11. Huang Z.H., Yang B., Fan X.J., and Fu D.J. Jpn. J. Appl. Phys. 45 (2006) 562
12. Deng Z.W., and Souda R. Thin Solid Films 406 (2002) 46
13. Xu W., Fujimoto T., Wang L., Ohchi T., and Kojima I. J. Vac. Sci. Technol., B 22 (2004) 6
14. Scharf T.W., Deng H., and Barnard J.A. J. Appl. Phys. 81 (1997) 5393
15. Robertson J. Mater. Sci. Eng., R Rep. 37 (2002) 129
16. Neidardt J., Czigany Zs., Brunell I.F., and Hultman L. J. Appl. Phys. 93 (2002) 3002