Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 399-402

  Mussler, G ^a   Daweritz L ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Interfaces; A1. Roughening; A3. Molecular beam epitaxy; A3. Superlattices; B1. Nitrides; B2. Semiconducting ternary compounds

Indexed keywords

ATOMIC FORCE MICROSCOPY; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

SURFACE QUALITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037382833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02190-5     Document Type: Conference Paper

References (12)

1. Sakai S., Ueta Y., Terauchi Y. Jpn. J. Appl. Phys. 32:1993;4413.
2. Wei S.-H., Zunger A. Phys. Rev. Lett. 76:1996;664.
3. Kondow M., Nakatsuka S., Kitatani T., Yazawa Y., Okai M. Jpn. J. Appl. Phys. 35:1996;5711.
4. Kurtz S.R., Allerman A.A., Jones E.D., Gee J.M., Banas J.J., Hammons B.E. Appl. Phys. Lett. 74:1999;729.
5. Yang K., Hains C.P., Cheng J. IEEE Photon. Techn. Lett. 12:2000;7.
6. Ellmers C., Höhnsdorf F., Koch J., Agert C., Leu S., Karaiskaj D., Hoffmann M., Stolz W., Rühle W.W. Appl. Phys. Lett. 74:1999;2271.
7. Adamcyk M., Schmid J.H., Tiedje T., Koveshnikov A., Chahboun A., Fink V., Kavanagh K.L. Appl. Phys. Lett. 80:2002;4357.
8. Suemune I., Uesugi K., Seong T.-Y. Semicond. Sci. Technol. 17:2002;755.
9. Berger P.R., Chang K., Bhattacharya P., Singh J., Bajaj K.K. Appl. Phys. Lett. 53:1988;684.
10. Gwo S., Huang S.-Y., Yang T.R. Phys. Rev. B. 64:2001;113312.
11. Brandt O., Waltereit P., Ploog K.H. J. Phys. D. 35:2002;577.
12. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.