Growth mode transitions in molecular-beam epitaxy of GaAs(0 0 1)

Thin Solid Films

Volumn 428, Issue 1-2, 2003, Pages 170-175

  Trofimov, Vladimir I ^a   Park, Hee Seok ^a,b  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^b Korea Resources Corporation   (South Korea)

Author keywords

GaAs; Growth mechanisms; Molecular beam epitaxy; Vicinal surface

Indexed keywords

DIFFUSION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; PHASE DIAGRAMS; SURFACE PROPERTIES; THERMAL EFFECTS;

VICINAL SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037457204     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01189-6     Document Type: Conference Paper

References (20)

1. Neave J.H., Dobson P.J., Joyce B.A., Zhang J. Appl. Phys. Lett. 47:1985;100.
2. Myers-Beaghton A.K., Vvedensky D.D. Phys. Rev. B. 42:(5544):1990.
3. Myers-Beaghton A.K., Vvedensky D.D. J. Phys. A. 23:(995):1990.
4. Myers-Beaghton A.K., Vvedensky D.D. J. Cryst. Growth. 111:(162):1991.
5. Ratsch C., Nelson M.D., Zangwill A. Phys. Rev. B. 50:1994;14489.
6. Iwanari S., Kimura Y., Takayanagi K. J. Cryst. Growth. 119:1992;229.
7. Iwanari S., Kimura Y., Takayanagi K. J. Cryst. Growth. 119:1992;241.
8. Johnson M.D., Orme C., Hunt A.W., Graff D., Sudijono J., Sander L.M., Orr B.G. Phys. Rev. Lett. 72:1994;116.
9. Roland C., Gilmer G.H. Phys. Rev. B. 54:1996;2931.
10. Rost M., Smilayer P., Krug J. Surf. Sci. 369:1996;393.
11. V.I. Trofimov, B.K. Medvedev, V.G. Mokerov, A.G. Shumyankov, MRS Symposium Proceedings 399, 47, MRS, Pittsburgh, 1996.
12. Schwoebel R.L., Shipsey E.J. J. Appl. Phys. 37:1966;3682.
13. Ehrlich G., Hudda F.G. J. Chem. Phys. 44:1966;1039.
14. Trofimov V.I., Osadchenko V.A. Growth and Morphology of Thin Films. 1993;Energoatomizdat, Moscow. In Russian.
15. Venables J.A., Spiller G.D.T., Hanbuken M. Rept. Prog. Phys. 47:1984;399.
16. Lee S.B., Gupta B.C. Phys. Rev. B. 62:2000;7545.
17. Kyuno K., Ehrlich G. Phys. Rev. Lett. 84:2000;2658.
18. Steltenpohl A., Memmel N. Phys. Rev. Lett. 84:2000;1728.
19. Shitara T., Nishinaga T. Jpn. J. Appl. Phys. 28:1989;1212.
20. Daweritz L., Ploog K. Semicond. Sci. Technol. 9:1994;123.