Growth and characterization of strained superlattices δ-GaNxAs1-x/GaAs by molecular beam epitaxy

Journal of Crystal Growth

Volumn 209, Issue 4, 2000, Pages 648-652

  Pan, Z ^a   Li, L H ^a   Lin, Y W ^a   Zhou, Z Q ^a   Zhang, W ^a   Wang, Y T ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; KINEMATICS; MOLECULAR BEAM EPITAXY; MONOLAYERS; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRAIN; SURFACE PHENOMENA; X RAY CRYSTALLOGRAPHY;

PERIODICITY FLUCTUATION; SURFACE RECONSTRUCTION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0033906397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00625-9     Document Type: Article

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