Interfacial chemistry of InP/GaAs bonded pairs

Journal of Electronic Materials

Volumn 36, Issue 3, 2007, Pages 179-190

  Liu, N ^a   Kuech, T F ^a,b  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

Fourier transform infrared spectroscopy (FTIR); Gallium arsenide; Indium phosphide; Wafer bonding

Indexed keywords

GALLIUM ARSENIDE; THERMAL ANNEALING SHIFTS;

ANNEALING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM ARSENIDE; WAFER BONDING;

SURFACE CHEMISTRY;

EID: 34247641707     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0077-1     Document Type: Article

References (74)

1. A. Plößl and G. Krauter, Mater. Sci. Eng. R 25, 1 (1999).
2. Z.H. Zhu, F. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. Christenson, and Y.H. Lo, IEEE J. Sci. Top. Quantum Electron 3, 927 (1997).
3. A. Black, A.R. Hawkins, N.M. Margalit, D.I. Babic, A.L. Holmes, Y.L. Chang, P. Abraham, J.E. Bowers, and E.L. Hu, IEEE J. Sci. Top. Quantum Electron. 3, 943 (1997).
4. H, Wada, H. Sasaki, and T. Kamijoh, Solid State Electron 43, 1655 (1999).
5. Y. Okuno, K. Uomi, M. Aoki, M. Aoki, and T. Tsuchiya, IEEE J. Quantum Electron. 33, 959 (1997).
6. Y. Ohlso and C. Amano, J. Appl. Phys. 87, 2857 (2000).
7. T. Akatsu, A. Plößl, H. Stenzel, and U. Gösele, J. Appl. Phys. 86, 7146 (1999).
8. T. Akatsu, A, Plößl, R. Scholz, H. Stenzel, and U. G̈sele, J. Appl. Phys. 90, 3856 (2001).
9. D.I. Babic, K. Streubel, R.P. Mirin, N.M. Margalit, J.E. Bowers, E.L. Hu, D.E. Mars, L. Yang, and K. Carey, IEEE Photonics Technol. Lett. 7, 1225 (1995).
10. Y. Ohiso, C. Amano, Y. Itoh, K. Tateno, T. Tadokoro, H. Takenouchi, and T. Kurokawa, Electron. Lett. 32, 1483 (1996).
11. N.M. Margalit, K.A. Black, Y.J. Chiu, E.R. Hegblom, K. Streubel, P. Abraham, M, Anzlowar, J.E. Bowers, and E.L. Hu, Electron. Lett. 34, 285 (1998).
12. F.A. Kish, et al., Appl. Phys. Lett. 64, 2839 (1994).
13. F.A. Kish, D.A. Defevere, D.A. Vanderwater, and G.R. Trott, Electron. Lett. 30, 1790 (1994).
14. I.-H. Tan, E.L. Hu, and J.E. Bowers, IEEE J. Quantum Electron. 31, 1863 (1995).
15. A. Suzuki, T. Itoh, T. Terakado, K. Kasahara, K. Asano, Y. Inomoto, H. Ishihara, T. Torikai, and S. Fujita, Electron. Lett. 27, 954 (1987).
16. M. Razeghi, J. Ramdani, H. Verriele, D. Decoster, M. Constant, and J. Vanbremeersch, Appl. Phys. Lett. 49, 215 (1986).
17. S.N.G. Chu, W.T. Tsang, T.H. Chiu, and A.T. Macrander, J. Appl. Phys. 66, 520 (1989).
18. D.J. Olego, Y. Okuno, T. Kawano, and M. Tamura, J. Appl. Phys. 71, 4503 (1992).
19. D.J. Olego, Y. Okuno, and T. Kawano, J. Appl. Phys. 71, 4493 (1992).
20. L. Lazzarini, G. Attolini, D. Bertone, P. Franzozi, C. Pelosi, and G. Salviati, Inst. Phys. Conf. Ser. 134, 325 (1993).
21. T. Akatsu, A. Plössl, R. Scholz, H. Stenzel, and U. Gösele, J. Appl. Phys. 90, 3856 (2001).
22. G. Patriarche, F. Jeannès, J.L. Oudar, and F. Glas, J. Appl. Phys. 82, 4892 (1997).
23. L. Sagalowicz, A. Rudra, A. Syrbu, J, Behrend, F. Salomonsson, K. Steubel, M. Hammar, and J. Bentell, Philos. Mag. Lett. 76, 445 (1997).
24. F. Shi, S. MacLaren, C. Su, K.Y. Cheng, and K.C. Hsieh, J. Appl. Phys. 93, 5750 (2003).
25. T. Akatsu, A. Plößl, H. Stenzel, and U. Gösele, J. Appl. Phys. 86, 7146 (1999).
26. G. Kräuter, T. Akatsu, S. Senz, A. Plossl, and U, Gösele, Appl. Phys. A 70, 13 (2000).
27. Y.S. Wu, R.S. Feigelson, R.K. Route, D. Zheng, L.A. Gordon, M.M. Feier, and R.L. Byer, J. Appl. Phys. 83, 5552 (1998).
28. D.M. Hansen, C.E. Albaugh, P.D. Moran, and T.F. Kuech, J. Appl. Phys. 90, 5991 (2001).
29. W.P. Maszara, G, Goetz, A, Caviglia, and J.B. McKitterick, J. Appl. Phys. 64, 4943 (1988).
30. N. Liu and T.F. Kuech, J. Electron. Mater. 34, 1010 (2005).
31. Y.J. Chabal, Surf. Sci. Rep. 8, 211 (1988).
32. Y.J. Chabal, M.A. Hines, and D. Feijóo, J. Vac. Sci. Technol. A 13, 1719 (1995).
33. M. Yamaguchi, J. Appl. Phys. 53, 1834 (1982).
34. G.P. Schwartz, W.A. Sunder, and J.E. Griffiths, Appl. Phys. Lett. 37, 925 (1980).
35. J.E. Griffiths, G.P. Schwartz, W.A. Sunder, H. Schonhorn, J. Appl. Phys. 53, 1832 (1982).
36. M. Rojas-Lopez, J. Nieto-Navarro, E. Rosendo, H. Navarro-Contreras, and M.A. Vidal, Thin Solid Films 379, 1 (2000).
37. M. Yamaguchi and K. Ando, J. Appl. Phys. 51, 5007 (1980).
38. G.P. Schwartz, W.A. Sunder, and J.E. Griffiths, J. Electroehem. Soc. 129, 1361 (1982).
39. D. Llieva, D. Kovacheva, C. Petkov, and G. Bogachev, J. Raman. Spectrosc. 32, 893 (2001).
40. D.W. Hall, S.A. Brawer, and M.J. Weber, Phys. Rev. B 25, 2828 (1982).
41. K. Raghavachari, Q. Fu, G. Chen, L. Li, C.H. Li, D.C. Law, and R.F. Hicks, J. Am. Chem. Soc. 124, 15119 (2002).
42. L.H. Dubois and G.P. Schwartz, Phys. Rev. B 26, 794 (1982).
43. A.F. I Morral, J.M. Zahler, M.J. Griggs, H.A. Atwater, and Y.J. Chabal, Phys. Rev. B 72, 085219 (2005).
44. Q. Fu, E. Negro, G. Chen, D.C. Law, C.H. Ki, R.F. Hicks, and K. Raghavachari, Phys. Rev. B 65, 075318 (2002).
45. O. Pluchery, Y.J. Chabal, and R.L. Opila, J. Appl. Phys. 94, 2707 (2003).
46. O. Pluchery, J. Eng Jr., R.L. Opila, and Y.J. Chabal, Surf. Sci. 75-80, 502 (2002).
47. H. Lüth and R. Matz, Phys. Rev. Lett. 46,1652 (1981).
48. D. Pasquariello, M. Camacho, K. Hjort, L. Dózsa, B. Szentpáli, Mater. Sci. Eng. B 80, 134 (2001).
49. Properties of Gallium Arsenide, 3rd ed., ed. M.R. Brozel and G.E. Stillman (London: INSPEC, Institution of Electrical Engineers, 1996), pp. 210-206.
50. Properties of Indium Phosphide, EMIS Datareviews Series No. 6 (London: INSPEC, Institution of Electrical Engineers, 1991), pp. 137-139.
51. Infrared Spectral Interpretation, ed. Brian Smith (Baton Rouge, LA: CRC Press, 1999), p. 33.
52. See various compounds listed throughout: Sadtler Handbook of Infrared Spectra, ed. W.W. Simons (Philadelphia, PA: Sadtler, 1978).
53. J.F. Wager, W.H. Makky, C.W. Wilmsen, and L.G. Meiners, Thin Solid Films 95, 342 (1982).
54. A. Nelson, K. Geib, and C.W. Wilmsen, J. Appl. Phys. 54, 4131 (1983).
55. N, Shibata and Hideaki Ikoma, Jpn. J. Appl. Phys. 31, 3976 (1992).
56. N, Shibata and H. Ikoma, Jpn. J. Appl. Phys. 32, 1197 (1993).
57. Y.S. Lee and W.A. Anderson, J. Appl. Phys. 65, 4051 (1989).
58. J.F. Wager and C.W. Wilmsen, J. Appl. Phys. 51, 812 (1980).
59. S. Coussan, Y. Bouteiller, and J.P. Perchard, J. Phys. Chem. A 102, 5789 (1998).
60. H.E. Evans and W.H. Weinberg, J. Chem. Phys. 71, 1537 (1979).
61. J.J. Eng, K. Raghavachari, Y.J. Chabal, B.E. Bent, G.W. Flynn, S.B. Christman, E.E. Chaban, G.P. Williams, K. Radermacher, and S. Mantl, J. Chem. Phys. 106, 9889 (1997).
62. T. Kratochwil, M. Wittmann, and J. Küppers, J. Electron. Spectrosc. Relat. Phenom. 64-65, 609 (1993).
63. S.Y. Venyaminov and F.G. Prendergast, Anal. Biochem. 248, 234 (1997).
64. H.E. Evans and W.H. Weinberg, J. Chem. Phys. 71, 1537 (1979).
65. S.L. Parrott Jr., J.W. Rogers, and J.M. White, Appl. Surf. Sci. 1, 443 (1978).
66. A.V. Felde, K. Kern, G.S. Higashi, Y.J. Chabal, and S.B. Christman, Phys. Rev. B 42, 5240 (1990).
67. C.C. Bahr, A.V, Felde, and M.J. Cardillo, J. Electron. Spectrosc. Relat. Phenom. 54/55, 1075 (1990).
68. J. Schneider, B. Dischler, H. Seelewind, P.M. Mooney, J, Lagowski, M. Matsui, D.R. Beard, and R.C. Newman, Appl. Phys. Lett. 54, 1442 (1989).
69. A. Nelson, K. Geib, and C.W. Wilmsen, J. Appl. Phys. 54, 4134 (1983).
70. G.P. Schwartz, W.A. Sunder, and J.E. Griffiths, J. Electroehem. Soc. 129, 1361 (1982).
71. G. Solomon and C. Fryhle, Organic Chemistry, 7th ed. (New York: J Wiley, 2002), pp, 481-482.
72. K. Mizuno, Y. Miyahita, Y. Shindo, and H. Ogawa, J. Phys. Chem. 99, 3225 (1999).
73. T, Jinkawa, G. Sakai, J. Tamaki, N. Miura, and N. Yamazoe, J. Molecular Catal. A. 155, 193 (2000).
74. A. Vimont, J.C. Lavalley, A. Sahibed-Dine, C.O. Arean, M.R. Delgado, and M. Daturi, J. Phys. Chem. B 109, 9656 (2005).