Characterisation of ultraviolet nanoimprint dedicated resists

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 967-972

  Voisin, P ^a,b,c   Zelsmann, M ^b   Cluzel, R ^b   Pargon, E ^b   Gourgon, C ^b   Boussey, J ^b  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c CEA LETI   (France)

Author keywords

Lithography; Nanoimprint; Residual layer thickness; UV curing resist; UV NIL

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURING; SCANNING ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

PATTERN SIZE; PLASMA CONDITIONS; RESIDUAL LAYER THICKNESS; UV CURING RESISTS;

NANOIMPRINT LITHOGRAPHY;

ATOMIC ABSORPTION SPECTRA; CURING; LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION;

EID: 34247625613     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.086     Document Type: Article

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