Single-electron manipulation to and from a SiO 2 surface by electrostatic force microscopy

Applied Physics Letters

Volumn 86, Issue 16, 2005, Pages 1-3

  Bussmann, E ^a   Zheng, N ^a   Williams, C C ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC FORCE MICROSCOPY; NANOMETERS; SPATIAL RESOLUTION; VACUUM CONDITIONS;

DIELECTRIC PROPERTIES; ELECTRIC POTENTIAL; ELECTROSTATICS; FREQUENCIES; POLARIZATION; SCANNING TUNNELING MICROSCOPY; SILICA; SURFACE PROPERTIES;

ELECTRONS;

EID: 20844458072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897429     Document Type: Article

References (7)

1. G. Binnig, H. Rohrer, Ch. Gerber, and E. Weibel, Phys. Rev. Lett. 49, 57 (1982).
2. D. Sarid, Scanning Force Microscopy with Applications to Electric, Magnetic, and Atomic Forces, Revised Ed. (Oxford University Press, New York, 1994).
3. L. J. Klein and C. C. Williams, Appl. Phys. Lett. 81, 4589 (2002).
4. E. Bussmann, D. J. Kim, and C. C. Williams, Appl. Phys. Lett. 85, 2538 (2004).
5. Specification sheet MikroMasch NSC15/Ti-Pt.
6. C. J. Chen, Introduction to Scanning Tunneling Microscopy (Oxford University Press, New York, 1993).
7. L. J. Klein and C. C. Williams, J. Appl. Phys. 95, 2547 (2004).