Halo ion implantation effect on extension profile studied by scanning capacitance microscopy using all-metal probe under FM control

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1848-1851

  Naitou, Yuichi ^a   Ookubo, Norio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

All metal probe; Extension junction depth; Extension gate overlap; FM control; Halo ion implantation; Scanning capacitance microscopy; Two dimensional dopant profiling

Indexed keywords

COATINGS; DIAMONDS; FREQUENCY MODULATION; ION IMPLANTATION; PROBES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SENSITIVITY ANALYSIS; SILICON;

ALL-METAL PROBE; EXTENSION JUNCTION DEPTH; EXTENSION-GATE OVERLAP; FM CONTROL; HALO ION IMPLANTATION; SCANNING CAPACITANCE MICROSCOPY; TWO-DIMENSIONAL DOPANT PROFILING;

MOSFET DEVICES;

EID: 3142643151     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1848     Document Type: Conference Paper

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