Topographic study of dislocation structure in hexagonal SiC single crystals with low dislocation density

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 57-63

  Nakamura, Daisuke ^a,b   Yamaguchi, Satoshi ^a   Gunjishima, Itaru ^a   Hirose, Yoshiharu ^a   Kimoto, Tsunenobu ^b  

^a Rd Management Section   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

A1. X ray topography; A2. Growth from vapor; B2. Semiconducting silicon compounds

Indexed keywords

BURGERS VECTOR; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SYNCHROTRONS; TOPOGRAPHY;

DISLOCATION DENSITY; EDGE DISLOCATIONS; ELASTIC INTERACTION; PEIERLS ENERGY; THREADING DISLOCATIONS;

SINGLE CRYSTALS;

EID: 34247593779     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.002     Document Type: Article

References (19)

1. Matsunami H., and Kimoto T. Mater. Sci. Eng. R 20 (1997) 125
2. Neudeck P.G., and Powell J.A. IEEE Electron Device Lett. 15 (1994) 63
3. Lendenmann H., Dahlquist F., Bergman J.P., Bleichner H., and Hallin C. Mater. Sci. Forum 389-391 (2002) 1259
4. Senzaki J., Kojima K., Kato T., Shimozato A., and Fukuda K. Mater. Sci. Forum 483 (2005) 661
5. Nakamura D., Gunjishima I., Yamaguchi S., Ito T., Okamoto A., Kondo H., Onda S., and Takatori K. Nature 430 (2004) 1009
6. Dudley M., Wang S., Huang W., Carter C.H., Tsvetkov V.F., and Fazi C. J. Phys. D 28 (1995) A63
7. Madar R., Pernot E., Anikin M., and Pons M. J. Phys.: Condens. Matter 14 (2002) 13009
8. Ma X.Y., Dudley M., Vetter W., and Sudarshan T. Jpn. J. Appl. Phys. Part 2-Lett. 42 (2003) L1077
9. Ohno T., Yamaguchi H., Kuroda S., Kojima K., Suzuki T., and Arai K. J. Crystal Growth 260 (2004) 209
10. Agrosi G., Fregola R.A., Monno A., Scandale E., and Tempesta G. Mater. Sci. Forum 483 (2005) 311
11. Okunev A.O., and Shul'pina I.L. Tech. Phys. Lett. 31 (2005) 491
12. Tsuchida H., Kamata I., Miyanagi T., Nakamura T., Nakayama K., Ishii R., and Sugawara Y. Jpn. J. Appl. Phys. Part 2-Lett. Express Lett. 44 (2005) L806
13. Vetter W.M., and Dudley M. J. Appl. Crystallogr. 34 (2001) 20
14. Hull D., and Bacon D.J. Introduction to Dislocations. fourth ed. (2001), Elsevier Butterworth-Heinemann, Oxford pp. 70, 200
15. Vetter W.M., and Dudley M. J. Appl. Crystallogr. 35 (2002) 689
16. Ha S., Nuhfer N.T., Rohrer G.S., DeGraef M., and Skowronski M. J. Electron. Mater. 29 (2000) L5
17. Peierls R. Proc. Phys. Soc. 52 (1940) 34
18. Nabarro F.R.N. Proc. Phys. Soc. 59 (1947) 256
19. Arlt G., and Schodder Jr. G.R. J. Acoust. Soc. Am. 37 (1965) 384