GaN HFET digital circuit technology for harsh environments

Electronics Letters

Volumn 39, Issue 24, 2003, Pages 1708-1709

  Hussain, T ^a   Micovic, M ^a   Tsen, T ^a   Delaney, M ^a   Chow, D ^a   Schmitz, A ^a   Hashimoto, P ^a   Wong, D ^a   Moon, J S ^a   Hu, Ming ^a   Duvall, J ^a   McLaughlin, D ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL CONTROL SYSTEMS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; INTEGRATED CIRCUIT MANUFACTURE; MESFET DEVICES; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE HETEROJUNCTION FIELD EFFECT TRANSISTOR DIGITAL CIRCUIT;

DIGITAL CIRCUITS;

EID: 0345566238     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031129     Document Type: Article

References (3)

1. Micovic, M., Moon, J.S., Kurdoghlian, A., Hashimoto, P., Wong, D., McCray, L., Hussain, T., and Janke, P.: 'K-band GaN power HFETs with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz'. Device Research Conf., 2001, Notre Dame, Indiana, USA, June 2001, pp. 199-200
2. Hussain, T., Kurdoghlian, A., Hashimoto, P., Wong, W.-S., Wetzel, M., Moon, J.-S., McCray, L., and Micovic, M.: 'GaN HFETs with excellent low noise performance at low power levels through the use of thin AlGaN Schottky barrier layer', IEDM 2001 Tech. Dig., pp. 25.3.1-25.3.4
3. Micovic, M., Kurdoghlian, A., Janke, P., Hashimoto, P., Wong, D.W.S., Moon, J.S., McCray, L., and Nguyen, C.: 'AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy', IEEE Trans. Electron Devices, 2001, 48, (3), pp. 591-596