Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps

Journal of Crystal Growth

Volumn 304, Issue 1, 2007, Pages 103-107

  Bassim, N D ^a   Twigg, M E ^a   Mastro, M A ^a   Eddy Jr , C R ^a   Zega, T J ^a   Henry, R L ^a   Culbertson, J C ^a   Holm, R T ^a   Neudeck, P ^b   Powell, J A ^c   Trunek, A J ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c Sest Inc   (United States)

^d OHIO AEROSPACE INSTITUTE   (United States)

Author keywords

A1. Interfaces; A1. Line defects; A1. Nucleation; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ALUMINUM COMPOUNDS; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

HALF LOOP PROPAGATION; LINE DEFECTS; SURFACE STEPS;

FILM GROWTH;

EID: 34247564608     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.007     Document Type: Article

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