State of stress and critical thickness of strained small-area SiGe layers

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 2, 1999, Pages 475-485

  Fischer, A ^a   Kuhne H ^a   Lippert, G ^a   Richter, H ^a   Tillack, B ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; COMPUTER SIMULATION; ELASTICITY; MATHEMATICAL MODELS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; STRAIN; STRESS ANALYSIS; STRESS RELAXATION; STRESS RELIEF;

EQUILIBRIUM THEORY; SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0033075290     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199902)171:2<475::AID-PSSA475>3.0.CO;2-C     Document Type: Article

References (6)

1. A. FISCHER and H. RICHTER, Appl. Phys. Lett. 61, 2656 (1992).
2. T. STOICA and L. VESCAN, J. Cryst. Growth 131, 32 (1993).
3. A. FISCHER and H. RICHTER, J. Appl. Phys. 75, 657 (1994).
4. A. ATKINSON, T. JOHNSON, A. H. HARKER, and S. C. JAIN, Thin Solid Films 274, 106 (1996).
5. A. FISCHER, H. KÜHNE, M. EICHLER, F. HOLLÄNDER, and H. RICHTER, Phys. Rev. B 54, 8761 (1996).
6. S. P. TIMOSHENKO and J. N. GOODIER, Theory of Elasticity, McGraw-Hill Publ. Co., New York 1982.