Electron microscopy investigation of the role of surface steps in the generation of dislocations during MOCVD growth of GaN on 4H-SiC

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1509-1512

  Bassim, N D ^a   Twigg, M E ^a   Mastro, M A ^a   Neudeck, P ^b   Eddy Jr , C R ^a   Henry, R L ^a   Holm, R N ^a   Powell, J A ^b   Trunek, A J ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

4H SiC; Dislocation; GaN; Heteroepitaxy; Surface step; TEM

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION DENSITIES; MISFIT DISLOCATION STRUCTURES; SURFACE STEPS;

EPITAXIAL FILMS;

EID: 33947311299     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1509     Document Type: Conference Paper

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