Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H-SiC mesas

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Twigg, M E ^a   Bassim, N D ^a,e   Mastro, M A ^a   Eddy, C R ^a   Henry, R L ^a   Culbertson, J C ^a   Holm, R T ^a   Neudeck, P ^b   Powell, J A ^c   Trunek, A J ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

^c OHIO AEROSPACE INSTITUTE   (United States)

^d Sest Inc   (United States)

^e NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

STRAIN PROFILES; STRAIN RELIEF MECHANISMS; THREADING EDGE DISLOCATIONS;

DISLOCATIONS (CRYSTALS); FILM GROWTH; NUCLEATION; SILICON CARBIDE; STRAIN ENERGY;

THIN FILMS;

EID: 33947305608     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2435068     Document Type: Article

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