Parameters of intrinsic point defects in silicon based on crystal growth, wafer processing, self- and metal- diffusion

ECS Transactions

Volumn 2, Issue 2, 2006, Pages 61-75

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electoronic Materials   (Italy)

^b MEMC Electoronic Materials   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTROCHEMISTRY; RAPID THERMAL ANNEALING; SILICON; SILICON WAFERS;

METAL DIFFUSION; VACANCY DEPTH PROFILES; WAFER PROCESSING;

POINT DEFECTS;

EID: 33745501011     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2195649     Document Type: Conference Paper

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