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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 415-419

Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers

(9) Strittmatter, A a Reissmann L a Seguin, R a Rodt, S a Brostowski, A a Pohl, U W a Bimberg, D a Hahn, E b Gerthsen, D b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b UNIVERSITY OF KARLSRUHE (Germany)

Author keywords

A1. Low dimensional structures; A1. Nanostructures; A3. Metalorganic chemical vapour deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CATHODOLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; PRESSURE EFFECTS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER LOCALIZATION; LOW DIMENSIONAL STRUCTURES; OPTOELECTRONIC NITRIDE DEVICES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9944225021 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.104 Document Type: Conference Paper

Times cited : (9)

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