Moderately doped channel multiple-FinFET for logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 976-979

  Shiho, Yasuhito ^a   Burnett, David ^a   Orlowski, Marius ^a   Mogab, Joe ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; LOGIC CIRCUITS; SEMICONDUCTOR DOPING; THREE DIMENSIONAL;

DOPING PROFILES; MODERATELY DOPED CHANNEL (MDC); SHORT CHANNEL DEVICES; UNDOPED CHANNELS;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 33847762231     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. H.-S. P. Wong et al., IEDM, pp 407, 1998
2. J. G. Fossum et al., IEDM, pp 679, 2003
3. Y. Liu et al., Trans. Nanotech., Vol. 2, No 4, pp 198, 2003
4. I. D. Mayergoyz et al., J. Applied Physics, Vol. 90, no. 6, pp 3019, 2001
5. A. Wettstein et al., SISPAD, pp 91, 2003
6. J. P. John et al., VLSI Symp., pp 178, 1996
7. A. Wild et al., J. Solid-State Circuits, vol. 32, no. 7, pp 1049, 1999